公开(公告)号：US20220254990A1

公开(公告)日：2022-08-11

申请号：US17488592

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghun Ryu ,  Shin Kwon ,  Byoungjae Bae ,  Hyunchul Shin ,  Gawon Lee

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns , a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.

公开(公告)号：US10347819B2

公开(公告)日：2019-07-09

申请号：US15340330

申请日：2016-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  Byoungjae Bae ,  Inho Kim ,  Shin Kwon ,  Eunsun Noh ,  Insun Park ,  Sangmin Lee

IPC: H01L27/22 ,  H01L43/08 ,  H01L21/033 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.