公开(公告)号：US20220254990A1

公开(公告)日：2022-08-11

申请号：US17488592

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghun Ryu ,  Shin Kwon ,  Byoungjae Bae ,  Hyunchul Shin ,  Gawon Lee

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns , a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.

公开(公告)号：US11006167B2

公开(公告)日：2021-05-11

申请号：US16661087

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunchul Shin ,  Hyunjin Park

IPC: H04N5/44 ,  H04N21/422

Abstract: Disclosed are a display apparatus, a method of controlling the same, and a recording medium thereof, the display apparatus including: a display; an infrared (IR) receiver; first and second interfaces; and a processor configured to: identify a remote-control code set corresponding to an external apparatus connected to the first interface, convert a first key code included in an IR signal of a remote controller into a second key code corresponding to the identified remote-control code set, based on the IR signal received in the IR receiver, transmit a signal including the converted second key code to the external apparatus through the first interface, and control the display to display an image based on a signal received from the external apparatus through the second interface.

公开(公告)号：US20240081083A1

公开(公告)日：2024-03-07

申请号：US18302832

申请日：2023-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhoe Kim ,  Hyunchul Shin ,  Jayeong Hyeon

IPC: H10B61/00

CPC classification number: H10B61/00

Abstract: A semiconductor device includes a substrate including cell and peripheral regions, and a boundary region therebetween, a lower insulating layer on the cell region and extending onto the boundary and peripheral regions, data storage patterns on the lower insulating layer on the cell region, a cell insulating layer on the lower insulating layer on the cell region and on the data storage patterns, a first upper insulating layer on the cell insulating layer, peripheral conductive lines on the lower insulating layer on the peripheral region, and a peripheral insulating layer on the lower insulating layer on the peripheral region and on the peripheral conductive lines. The peripheral insulating layer extends onto the lower insulating layer on the boundary region to be in contact with side surfaces of the cell insulating layer and the first upper insulating layer. The peripheral insulating layer includes a material different from the cell insulating layer.

公开(公告)号：US10573806B1

公开(公告)日：2020-02-25

申请号：US16392046

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungtae Nam ,  Seung Pil Ko ,  Woojin Kim ,  Hyunchul Shin ,  Youngsoo Choi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02

Abstract: A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.