公开(公告)号：US10950604B2

公开(公告)日：2021-03-16

申请号：US16908829

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Choi Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20230170351A1

公开(公告)日：2023-06-01

申请号：US18097664

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L29/785 ,  H01L27/0207 ,  H01L29/0649 ,  H01L27/0924 ,  H01L21/823821

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20170162568A1

公开(公告)日：2017-06-08

申请号：US15370463

申请日：2016-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/785 ,  H01L29/7854

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20210151433A1

公开(公告)日：2021-05-20

申请号：US17161950

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US09773785B2

公开(公告)日：2017-09-26

申请号：US15219374

申请日：2016-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Baik Chang ,  Byoung Hak Hong ,  Yoon Suk Kim ,  Seung Hyun Song

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L27/0924 ,  H01L29/7843 ,  H01L29/7845

Abstract: A semiconductor device includes first and second fins on first and second regions of a substrate, a first trench overlapping a vertical end portion of the first fin and including first upper and lower portions, the first upper and lower portions separated by an upper surface of the first fin, a second trench overlapping a vertical end portion of the second fin and including second upper and lower portions separated by an upper surface of the second fin, a first dummy gate electrode including first metal oxide and filling layers, the first metal oxide layer filling the first lower portion of the first trench and is along a sidewall of the first upper portion of the first trench, and a second dummy gate electrode filling the second trench and including second metal oxide and filling layers, the second metal oxide layer extending along sidewalls of the second trench.

公开(公告)号：US11581311B2

公开(公告)日：2023-02-14

申请号：US17161950

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20200321334A1

公开(公告)日：2020-10-08

申请号：US16908829

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US10714473B2

公开(公告)日：2020-07-14

申请号：US16671478

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20200066720A1

公开(公告)日：2020-02-27

申请号：US16671478

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.