公开(公告)号：US20170162568A1

公开(公告)日：2017-06-08

申请号：US15370463

申请日：2016-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/785 ,  H01L29/7854

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20230170351A1

公开(公告)日：2023-06-01

申请号：US18097664

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L29/785 ,  H01L27/0207 ,  H01L29/0649 ,  H01L27/0924 ,  H01L21/823821

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US11133311B2

公开(公告)日：2021-09-28

申请号：US16358989

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Kyoung Min Choi ,  Takeshi Okagaki ,  Dong Won Kim ,  Jong Chol Kim

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US11876097B2

公开(公告)日：2024-01-16

申请号：US17395778

申请日：2021-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Kyoung Min Choi ,  Takeshi Okagaki ,  Dong Won Kim ,  Jong Chol Kim

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L27/0928 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/7854

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US20210151433A1

公开(公告)日：2021-05-20

申请号：US17161950

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US11581311B2

公开(公告)日：2023-02-14

申请号：US17161950

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20200321334A1

公开(公告)日：2020-10-08

申请号：US16908829

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US10714473B2

公开(公告)日：2020-07-14

申请号：US16671478

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

公开(公告)号：US20200066720A1

公开(公告)日：2020-02-27

申请号：US16671478

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Song ,  Yoon Suk Kim ,  Kyu Baik Chang ,  Ui Hui Kwon ,  Yo Han Kim ,  Jong Chol Kim ,  Chang Wook Jeong

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L27/092

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.