公开(公告)号：US11696436B2

公开(公告)日：2023-07-04

申请号：US17035082

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Seok Lee ,  Jae Hyun Yoon ,  Kyu Jin Kim ,  Keun Nam Kim ,  Hui-Jung Kim ,  Kyu Hyun Lee ,  Sang-Il Han ,  Sung Hee Han ,  Yoo Sang Hwang

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

公开(公告)号：US11239311B2

公开(公告)日：2022-02-01

申请号：US16897492

申请日：2020-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Jung Kim ,  Kyu Jin Kim ,  Sang-Il Han ,  Kyu Hyun Lee ,  Woo Young Choi ,  Yoo Sang Hwang

IPC: H01L29/06 ,  H01L29/423

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

公开(公告)号：US20190214293A1

公开(公告)日：2019-07-11

申请号：US16028794

申请日：2018-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu Jin Kim ,  Min Su Choi ,  Sung Hee Han ,  Bong Soo Kim ,  Yoo Sang Hwang

IPC: H01L21/762 ,  H01L27/108

CPC classification number: H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10894 ,  H01L27/10897

Abstract: A method of fabricating a semiconductor device includes preparing a substrate including a cell region and a peripheral region having different active region densities, forming cell trenches for limiting cell active regions in the cell region so that the cell active regions are formed to be spaced apart by a first width in a first direction and by a second width in a second direction, forming peripheral trenches for limiting a peripheral active region in the peripheral region, and forming, in the cell trenches, a first insulating layer continuously extending in the first and second directions and contacting sidewalls of the cell active regions, and having a thickness equal to or greater than half of the first width and less than half of the second width.

公开(公告)号：US11715760B2

公开(公告)日：2023-08-01

申请号：US17587444

申请日：2022-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Jung Kim ,  Kyu Jin Kim ,  Sang-Il Han ,  Kyu Hyun Lee ,  Woo Young Choi ,  Yoo Sang Hwang

IPC: H01L29/06 ,  H01L29/423

CPC classification number: H01L29/0649 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/42368

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.