公开(公告)号：US12266652B2

公开(公告)日：2025-04-01

申请号：US17691293

申请日：2022-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo Park ,  Yeonho Park ,  Kyubong Choi ,  Eunsil Park ,  Junseok Lee ,  Jinseok Lee

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

公开(公告)号：US20230005910A1

公开(公告)日：2023-01-05

申请号：US17694192

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junmo Park ,  Yeonho Park ,  Kyubong Choi ,  Cheol Kim ,  Junseok Lee ,  Jinseok Lee

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor memory device includes: a substrate having a first channel structure and a second channel structure respectively extending in a first direction and arranged in a second direction perpendicular to the first direction; a first gate structure disposed on the first channel structure and extending in the second direction on the substrate; a second gate structure disposed on the second channel structure and extending in the second direction; first source/drain regions respectively disposed on opposite sides of the first gate structure; second source/drain regions respectively disposed on opposite sides of the second gate structure; a gate separation pattern disposed between the first and second gate structures and having an upper surface at a level lower than that of an upper surface of each of the first and second gate structures, the gate separation pattern including a first insulating material; and a gate capping layer disposed on the first and second gate structures and having an extension portion extending between the first and second gate structures to be connected to the gate separation pattern, the gate capping layer including a second insulating material different from the first insulating material.

公开(公告)号：US20230029827A1

公开(公告)日：2023-02-02

申请号：US17685593

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo Park ,  Yeonho Park ,  Eunsil Park ,  Jinseok Lee ,  Wangseop Lim ,  Kyubong Choi

IPC: H01L27/092 ,  H01L21/8238

Abstract: An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.