公开(公告)号：US12266652B2

公开(公告)日：2025-04-01

申请号：US17691293

申请日：2022-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo Park ,  Yeonho Park ,  Kyubong Choi ,  Eunsil Park ,  Junseok Lee ,  Jinseok Lee

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

公开(公告)号：US20230005910A1

公开(公告)日：2023-01-05

申请号：US17694192

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junmo Park ,  Yeonho Park ,  Kyubong Choi ,  Cheol Kim ,  Junseok Lee ,  Jinseok Lee

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor memory device includes: a substrate having a first channel structure and a second channel structure respectively extending in a first direction and arranged in a second direction perpendicular to the first direction; a first gate structure disposed on the first channel structure and extending in the second direction on the substrate; a second gate structure disposed on the second channel structure and extending in the second direction; first source/drain regions respectively disposed on opposite sides of the first gate structure; second source/drain regions respectively disposed on opposite sides of the second gate structure; a gate separation pattern disposed between the first and second gate structures and having an upper surface at a level lower than that of an upper surface of each of the first and second gate structures, the gate separation pattern including a first insulating material; and a gate capping layer disposed on the first and second gate structures and having an extension portion extending between the first and second gate structures to be connected to the gate separation pattern, the gate capping layer including a second insulating material different from the first insulating material.

公开(公告)号：US20240347596A1

公开(公告)日：2024-10-17

申请号：US18512322

申请日：2023-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junmo PARK ,  Deokhwan Kim ,  Junsu Kong ,  Yeonho Park ,  Hyungjin Park ,  Sujin Lee ,  Jinseok Lee

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device including a substrate having an active pattern, first and second semiconductor patterns provided on the active pattern vertically spaced apart from each other, a source/drain pattern connected to the first and second semiconductor patterns, a gate electrode between the first and second semiconductor patterns, and a gate insulating pattern enclosing the gate electrode, wherein the gate insulating pattern includes, a high-k dielectric pattern enclosing the gate electrode, an inner spacer between the high-k dielectric pattern and the source/drain pattern, and a mask insulating pattern having an etch selectivity with respect to the inner spacer between the high-k dielectric pattern and the inner spacer.

公开(公告)号：US10474574B2

公开(公告)日：2019-11-12

申请号：US15781316

申请日：2016-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhun Yu ,  Wonjin Kim ,  Hyunsik Kim ,  Sunho Moon ,  Minwook Ahn ,  Rakie Kim ,  Kyoungsoo Cho ,  Nikunj Saunshi ,  Parichay Kapoor ,  Pankaj Agarwal ,  Won-Sub Kim ,  Jin-Hyo Kim ,  Hyunghoon Kim ,  Jisu Oh ,  Keongho Lee ,  Seung-Beom Lee ,  Jinseok Lee ,  Dong-Gi Jang ,  Subin Jo ,  Apoorv Kansal

IPC: G06F12/00 ,  G06F12/06 ,  G06F12/02 ,  G06F12/0882 ,  G06F9/50 ,  G06F12/0817 ,  G06F12/1009

Abstract: The present disclosure relates to system resource management in a variety of situations. The present disclosure provides a method and an apparatus for reducing memory requirements and improving processing speed when an electronic device performs padding for a particular arithmetic operation on data. To achieve the above objective, a method for operating an electronic device according to the present disclosure comprises the steps of: reading a first portion of data from a first memory; determining a first padding address based on the address of a byte belonging to a boundary region of the data among a plurality of bytes included in the first portion; writing values of the plurality of bytes and a value corresponding to the first padding address to a second memory; and reading a second portion of the data from the first memory.

公开(公告)号：US20250082250A1

公开(公告)日：2025-03-13

申请号：US18883205

申请日：2024-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Jinseok Lee ,  Sang Kyu Kim ,  Yongbin Lee ,  Hong Soon Rhee

IPC: A61B5/361 ,  A61B5/024

Abstract: A method of detecting atrial fibrillation includes receiving a photoplethysmogram (PPG) signal from a first sensor of a wearable device, detecting a heart rate from the PPG signal based on a window power spectrum analysis of the PPG signal, and detecting atrial fibrillation based on the heart rate.

公开(公告)号：US20240370043A1

公开(公告)日：2024-11-07

申请号：US18652866

申请日：2024-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghun Kim ,  Minjung Kim ,  Taemin Kim ,  Jiho Uh ,  Jinseok Lee ,  Geongu Jang

IPC: G05D7/06 ,  H01L21/67

Abstract: A method of manufacturing using a mass flow controller (MFC) includes closing a valve installed in a flow path of the MFC to prevent a fluid from flowing therein due to a closure of the valve, determining that the fluid is not leaking, determining that the fluid is stabilized, determining that a pressure sensor is normal, calculating a zero point calibration value of the pressure sensor based on a zero point of the pressure sensor, a time when power is supplied to the MFC, and a time when a flow is supplied to the MFC, applying the zero point calibration value to the pressure sensor, and measure the mass flow rate through the flow path with the pressuring sensor and adjusting the valve based on the mass flow rate to regulate the flow of the fluid to a manufacturing device.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US11600511B2

公开(公告)日：2023-03-07

申请号：US17189392

申请日：2021-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihong Cho ,  Kyuchul Shim ,  Chungho Cho ,  Jiho Uh ,  Jinseok Lee ,  Namki Cho

IPC: H01L21/683 ,  H02N13/00 ,  H01J37/32

Abstract: A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

公开(公告)号：US20230029827A1

公开(公告)日：2023-02-02

申请号：US17685593

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo Park ,  Yeonho Park ,  Eunsil Park ,  Jinseok Lee ,  Wangseop Lim ,  Kyubong Choi

IPC: H01L27/092 ,  H01L21/8238

Abstract: An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.