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公开(公告)号：US12205576B2
公开(公告)日：2025-01-21
申请号：US17968517
申请日：2022-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinhwan Park , Sungsoo Kim , Sichen Jin , Junmo Park , Dhairya Sandhyana , Changwoo Han
Abstract: An electronic apparatus includes a memory storing a speech recognition model and first recognition information corresponding to a first user voice obtained through the speech recognition model, the speech recognition model including a first network, a second network, and a third network; and a processor configured to: obtain a first vector by inputting voice data corresponding to a second user voice to the first network, obtain a second vector by inputting the first recognition information to the second network which generates a vector based on first weight information, and obtain second recognition information corresponding to the second user voice by inputting the first vector and the second vector to the third network which generates recognition information based on second weight information, wherein at least a part of the second weight information is the same as the first weight information.
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公开(公告)号：US20220165291A1
公开(公告)日：2022-05-26
申请号：US17574214
申请日：2022-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sichen Jin , Kwangyoun Kim , Sungsoo Kim , Junmo Park , Dhairya Sandhyana , Changwoo Han
Abstract: An electronic apparatus, including a processor connected with a microphone, a memory and a communication interface, and configured to: based on receiving a user voice through the microphone, acquire an operation result by inputting the user voice into the first neural network model, and identify at least one device corresponding to the user voice by inputting the operation result into the second neural network model, and control the communication interface to transmit the operation result to the at least one device, wherein the first neural network model is configured to, after only some layers of a third neural network model trained to identify a text from a voice are additionally trained, include only the additionally trained some layers, and wherein the second neural network model is trained to identify a device corresponding to a voice.
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公开(公告)号：US20230130396A1
公开(公告)日：2023-04-27
申请号：US17968517
申请日：2022-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinhwan PARK , Sungsoo Kim , Sichen Jin , Junmo Park , Dhairya Sandhyana , Changwoo Han
Abstract: An electronic apparatus includes a memory storing a speech recognition model and first recognition information corresponding to a first user voice obtained through the speech recognition model, the speech recognition model including a first network, a second network, and a third network; and a processor configured to: obtain a first vector by inputting voice data corresponding to a second user voice to the first network, obtain a second vector by inputting the first recognition information to the second network which generates a vector based on first weight information, and obtain second recognition information corresponding to the second user voice by inputting the first vector and the second vector to the third network which generates recognition information based on second weight information, wherein at least a part of the second weight information is the same as the first weight information.
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公开(公告)号：US20230119489A1
公开(公告)日：2023-04-20
申请号：US17968307
申请日：2022-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngho Han , Junmo Park
Abstract: A control method of an electronic device includes receiving a voice signal including a wake-up word and an instruction word for activating a voice recognition function, performing first voice recognition by acquiring at least one first candidate text in each frame of a first plurality of predetermined frames for a first voice signal section corresponding to the wake-up word in the voice, performing second voice recognition by acquiring at least one second candidate text in each frame of a second plurality of predetermined frames for a second voice signal section corresponding to the instruction word in the voice signal and performing second voice recognition, and providing a function corresponding to the instruction word based on results of the first voice recognition and the second voice recognition.
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公开(公告)号：US11575018B2
公开(公告)日：2023-02-07
申请号：US17153464
申请日：2021-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Juyoun Kim , Sangjung Kang , Jinwoo Kim , Junmo Park , Seulgi Yun
IPC: H01L29/49 , H01L27/092 , H01L29/423 , H01L29/786
Abstract: A semiconductor memory device includes a substrate having a first region and a second region. A first gate electrode layer is on the first region and includes a first conductive layer including a first plurality of layers, and includes a first upper conductive layer on the first conductive layer. A second gate electrode layer is on the second region and includes a second conductive layer including a second plurality of layers, and includes a second upper conductive layer on the second conductive layer. At least one of the first plurality of layers includes titanium oxynitride (TiON). A first transistor including the first gate electrode layer and a second transistor including the second gate electrode layer are metal oxide semiconductor field effect transistors (MOSFETs) having the same channel conductivity type, and a threshold voltage of the first transistor is smaller than a threshold voltage of the second transistor.
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Patent Agency Ranking
公开(公告)号：US20210328038A1
公开(公告)日：2021-10-21
申请号：US17153464
申请日：2021-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Juyoun Kim , Sangjung Kang , Jinwoo Kim , Junmo Park , Seulgi Yun
IPC: H01L29/49 , H01L27/092 , H01L29/423 , H01L29/786
Abstract: A semiconductor memory device includes a substrate having a first region and a second region. A first gate electrode layer is on the first region and includes a first conductive layer including a first plurality of layers, and includes a first upper conductive layer on the first conductive layer. A second gate electrode layer is on the second region and includes a second conductive layer including a second plurality of layers, and includes a second upper conductive layer on the second conductive layer. At least one of the first plurality of layers includes titanium oxynitride (TiON). A first transistor including the first gate electrode layer and a second transistor including the second gate electrode layer are metal oxide semiconductor field effect transistors (MOSFETs) having the same channel conductivity type, and a threshold voltage of the first transistor is smaller than a threshold voltage of the second transistor.
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公开(公告)号：US11893980B2
公开(公告)日：2024-02-06
申请号：US17430614
申请日：2021-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sichen Jin , Kwangyoun Kim , Sungsoo Kim , Junmo Park , Dhairya Sandhyana , Changwoo Han
IPC: G10L15/183 , H04N21/488 , G06V10/20 , G10L15/26
CPC classification number: G10L15/183 , G06V10/255 , G10L15/26 , H04N21/4884
Abstract: An electronic apparatus and a control method thereof are provided. The electronic apparatus includes a communication interface configured to receive content comprising image data and speech data; a memory configured to store a language contextual model trained with relevance between words; a display; and a processor configured to: extract an object and a character included in the image data, identify an object name of the object and the character, generate a bias keyword list comprising an image-related word that is associated with the image data, based on the identified object name and the identified character, convert the speech data to a text based on the bias keyword list and the language contextual model, and control the display to display the text that is converted from the speech data, as a caption.
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公开(公告)号：US20230029827A1
公开(公告)日：2023-02-02
申请号：US17685593
申请日：2022-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junmo Park , Yeonho Park , Eunsil Park , Jinseok Lee , Wangseop Lim , Kyubong Choi
IPC: H01L27/092 , H01L21/8238
Abstract: An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.
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公开(公告)号：US12266652B2
公开(公告)日：2025-04-01
申请号：US17691293
申请日：2022-03-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junmo Park , Yeonho Park , Kyubong Choi , Eunsil Park , Junseok Lee , Jinseok Lee
IPC: H01L27/088 , H01L21/762 , H01L21/8234
Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.
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公开(公告)号：US11669491B2
公开(公告)日：2023-06-06
申请号：US17224628
申请日：2021-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junmo Park , Dongsuk Jeon
CPC classification number: G06F15/82 , G06F15/7807
Abstract: Provided is an operation method of a processor including a plurality of heterogeneous cores, the operation method including selecting an execution core of the plurality of heterogeneous cores for executing an application, loading, from a memory, first data corresponding to core information of the execution core during runtime of the execution core, wherein the first data is included in compile data, the compile data including a first function compiled for each heterogeneous core of the plurality of heterogeneous cores, the first function being a function from among a plurality of functions of the application that is at least one of frequently called or having a long execution time, and processing, by the execution core, execution codes for executing the application, based on the first data.
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