公开(公告)号：US20160013231A1

公开(公告)日：2016-01-14

申请号：US14614659

申请日：2015-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Ho LEE

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645

Abstract: A phase-difference detection pixel includes a photodiode layer on a substrate and including a recess, a light-blocking layer in the recess, a first insulating layer on the photodiode and light-blocking layers, a color filter layer on the first insulating layer, and a microlens layer on the color filter layer.

Abstract translation: 相位差检测像素包括在基板上的光电二极管层，其包括凹部，凹部中的阻光层，光电二极管上的第一绝缘层和遮光层，第一绝缘层上的滤色器层， 和滤色器层上的微透镜层。

公开(公告)号：US20160035773A1

公开(公告)日：2016-02-04

申请号：US14641621

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo NAH ,  Jung-Chak AHN ,  Kyung-Ho LEE

IPC: H01L27/146 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

Abstract translation: 一种半导体器件包括响应于入射光而输出电荷的光接收元件，以及由该光接收元件的输出选通以与入射光成比例地产生源极 - 漏极电流的驱动晶体管，其中 所述驱动晶体管包括第一栅极电极，设置在所述第一栅极电极下方的第一沟道区域，设置在所述第一沟道区域的各个端部并具有第一导电类型的第一源极 - 漏极区域，以及第一沟道区域 停止区域，其设置在所述第一沟道区域的一侧，并且分离所述光接收元件和所述第一沟道区域，所述第一沟道截止区域具有与所述第一导电类型不同的第二导电类型。

公开(公告)号：US20160014353A1

公开(公告)日：2016-01-14

申请号：US14583029

申请日：2014-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Ho LEE ,  Hee-Sang KWON

IPC: H04N5/347 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/347 ,  H04N5/35554 ,  H04N5/378

Abstract: A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.

Abstract translation: 图像传感器的单位像素包括电荷产生单元，信号产生单元和接地控制晶体管。 电荷产生单元响应于入射光产生光电荷，并响应于传输控制信号将光电荷提供给浮动扩散区域。 信号生成单元基于复位控制信号和行选择信号生成具有与浮动扩散区域的电位对应的幅度的模拟信号。 接地控制晶体管耦合在浮动扩散区域和接地电压之间，并响应于接地控制信号而导通。

公开(公告)号：US20180102389A1

公开(公告)日：2018-04-12

申请号：US15671546

申请日：2017-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Ho LEE

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/225

CPC classification number: H01L27/14625 ,  G02B7/365 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H04N5/2254 ,  H04N5/23212

Abstract: An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.

公开(公告)号：US20170207264A1

公开(公告)日：2017-07-20

申请号：US15477148

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun OH ,  Kyung-Ho LEE ,  Jung-Chak AHN ,  Hee-Geun JEONG

IPC: H01L27/146 ,  H01L31/02

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US20150155328A1

公开(公告)日：2015-06-04

申请号：US14515835

申请日：2014-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae-Yong PARK ,  Kyung-Ho LEE ,  Jung-Chak AHN ,  Sang-Jun CHOI

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14645 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464

Abstract: In an image sensor, a photoelectric convertor is arranged in an active region of substrate and a floating diffusion area is arranged over the photoelectric convertor. A transfer transistor transfers the photo charges to the floating diffusion area from the photoelectric convertor and the transfer gate electrode has a narrow upper structure that extends downwards vertically from the top surface of the substrate and a broad lower structure that is connected to the upper structure and has a width greater than a width of the upper structure. A reading device is on the top surface of the substrate and detects the photo charges from the floating diffusion area. Accordingly, the effective gate length of the transfer gate electrode is increased, and thus, high resolution image data can be obtained in spite of the size reduction of the image sensor.

Abstract translation: 在图像传感器中，光电转换器布置在衬底的有源区域中，并且浮动扩散区域布置在光电转换器的上方。 传输晶体管将光电荷从光电转换器传送到浮动扩散区域，并且传输栅电极具有从衬底的顶表面垂直向下延伸的窄上结构，以及连接到上结构的宽下层结构， 具有大于上部结构的宽度的宽度。 读取装置位于基板的顶表面上并从浮动扩散区域检测照相电荷。 因此，传输栅极的有效栅极长度增加，因此尽管图像传感器的尺寸减小，仍可获得高分辨率图像数据。