公开(公告)号：US20130269739A1

公开(公告)日：2013-10-17

申请号：US13660259

申请日：2012-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-woo HWANG ,  Kyu-hyoung LEE ,  Sang-il KIM ,  Kyung-han AHN

IPC: H01L35/16

CPC classification number: H01L35/16 ,  H01L35/26

Abstract: A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about −1.0 electron volt to about 1.0 electron volt.

Abstract translation: 一种热电材料，包括：热电矩阵; 以及布置在所述热电矩阵中的多个金属纳米颗粒，其中所述热电基体的功函数和所述金属纳米颗粒的金属颗粒的功函数之间的差约为-1.0电子伏至约1.0电子伏特。

公开(公告)号：US20150024236A1

公开(公告)日：2015-01-22

申请号：US14146274

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-min KANG ,  Kyung-han AHN ,  Young-jae KANG ,  Sang-mock LEE

IPC: H01F1/03

CPC classification number: H01F10/265 ,  C22C29/12 ,  C22C2202/02 ,  H01F1/11 ,  H01F1/344 ,  H01F1/346 ,  H01Q7/06 ,  Y10T428/12611 ,  Y10T428/24975 ,  Y10T428/265

Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Abstract translation: 软磁交换耦合复合结构以及包括软磁交换耦合复合结构的高频器件部件，天线模块和磁阻器件包括铁素体晶粒作为主相和软磁金属薄 膜通过原子尺度上的界面键合结合到铁素体晶粒上。 与铁素体晶粒的界面相邻的软磁性金属薄膜的区域包括结晶软磁性金属。

公开(公告)号：US20130298954A1

公开(公告)日：2013-11-14

申请号：US13849753

申请日：2013-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-han AHN ,  Sang-il KIM ,  Byung-ki RYU ,  Kyu-hyoung LEE ,  Sung-woo HWANG

IPC: H01L35/16

CPC classification number: H01L35/16 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/50 ,  C01P2004/61 ,  C01P2006/40 ,  Y02P20/129 ,  Y02P20/13

Abstract: A thermoelectric material including a composition of Formula 1: (Bi1-x-zSbxAz)u(Te1-ySey)w,  Formula 1 wherein A is a transition metal, 0≦x

Abstract translation: 包含式1的组合物的热电材料：（Bi1-x-zSbxAz）u（Te1-ySey）w，式1其中A是过渡金属，0≤x≤1,0≤y≤1,0< 0.03，1.8 @ u @ 2.2和2.8 @ w @ 3.2。

公开(公告)号：US20150024238A1

公开(公告)日：2015-01-22

申请号：US14150317

申请日：2014-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-min KANG ,  Kyung-han AHN ,  Sang-mock LEE

IPC: G11B5/667 ,  G11B5/64 ,  G11B5/65

CPC classification number: G11B5/667 ,  G11B5/653 ,  G11B5/7325 ,  H01F10/3222

Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract translation: 硬磁交换耦合复合结构和包括硬磁交换耦合复合结构的垂直磁记录介质包括铁氧体晶粒和与原子尺度界面键合在铁素体晶粒上的软磁金属薄膜，并具有 约5nm或更小的厚度，其中与铁素体晶粒的界面相邻的软磁金属薄膜的区域包括非晶软磁金属膜。

公开(公告)号：US20130284967A1

公开(公告)日：2013-10-31

申请号：US13871246

申请日：2013-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-il KIM ,  Kyu-hyoung LEE ,  Sung-woo HWANG ,  Kyung-han AHN

IPC: H01L35/18

CPC classification number: H01L35/18 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/00 ,  C01P2002/01 ,  C01P2006/40 ,  H01L35/16

Abstract: A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: (BixSb1-x)a(TeySe1-y)b  Formula 1 wherein 1.8≦a≦2.2, 2.8≦b≦3.2, 0≦x≦1, and 0≦y≦1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.

Abstract translation: 一种热电材料，包括：包含具有式1的组成的晶粒的热电基体：（BixSb1-x）a（TeySe1-y）bFormula 1，其中1.8 @ a @ 2.2,2.8 @ b @ 3.2,0 @ x1和 0 @ y @ 1，并且其中沿着式1的组合物的相邻颗粒之间的晶界存在多个位错。