公开(公告)号：US20250020998A1

公开(公告)日：2025-01-16

申请号：US18633948

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungoh Kim ,  Jaemyoung Kim ,  Seungwook Shin ,  Wanhee Lim ,  Moohyun Koh ,  Minsoo Kim ,  Seungwoo Jang ,  Suk Koo Hong

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: A photoresist composition includes an organometallic compound, which includes at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a phosphonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate using the photoresist composition, and forming a modified organometallic compound by binding an organic ligand including a phosphonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US20250020997A1

公开(公告)日：2025-01-16

申请号：US18632766

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk Koo Hong ,  Jaemyoung Kim ,  Taegeun Seong ,  Minyoung Lee ,  Moohyun Koh ,  Kyungoh Kim ,  Minsoo Kim ,  Changsoo Woo

IPC: G03F7/004 ,  H01L21/027

Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US20240239820A1

公开(公告)日：2024-07-18

申请号：US18329976

申请日：2023-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghyun HAN ,  Haengdeog Koh ,  Yoonhyun Kwak ,  Kyungoh Kim ,  Mijeong Kim ,  Jaejun Lee ,  Hasup Lee ,  Kyuhyun IM ,  Sukkoo Hong

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07F7/2224 ,  G03F7/0042 ,  G03F7/0048 ,  G03F7/2004

Abstract: Provided are an organometallic compound represented by one of Formulas 1-1 to 1-4 below.






a resist composition including the same, and a pattern forming method using the same. For descriptions of M11, L11 to L14, a11 to a14, R11 to R14, X11 to X14, n11 to n15, Y11 to Y13, and R15 to R17 in Formulas 1-1 to 1-4, refer to the specification.