公开(公告)号：US20240231223A1

公开(公告)日：2024-07-11

申请号：US18326632

申请日：2023-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Yoonhyun Kwak ,  Mijeong Kim ,  Minsang Kim ,  Sunyoung Lee ,  Changheon Lee ,  Kyuhyun Im ,  Jungha Chae ,  Sunghyun Han

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0042 ,  C07F7/2208

Abstract: Provided are a resist composition and a method of forming a pattern by using the same, the resist composition including: an organometallic compound represented by Formula 1; and a polymer including a repeating unit containing a radical generating group, a repeating unit containing a radical accepting group, or any combination thereof.


Sn(R11)n(OR12)(4-n)   Formula 1

Descriptions of R11, R12 and n in Formula 1 are provided in the specification.

公开(公告)号：US20220185947A1

公开(公告)日：2022-06-16

申请号：US17546294

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho Noh ,  Insu Lee ,  Songwon Hyun ,  Yoonseok Ko ,  Mijeong Kim ,  Keechang Lee ,  Sangsoo Jee

IPC: C08G59/24 ,  C08G59/62 ,  C08K3/013 ,  C08L63/00

Abstract: An epoxy compound having an aromatic ring represented by Formula 1 or Formula 2, a composition prepared from the epoxy compound, a semiconductor device prepared from the epoxy compound, an electronic device prepared from the epoxy compound, an article prepared from the epoxy compound, and a method of preparing the epoxy compound: E1-(M1)a1-(L1)b1-(M2)a2-L2-A1-L3-(M3)a3-(L4)b2-(M4)a4-E2  Formula 1 E3-(A2)c1-(L5)b3-(M5)a5-L6-(M6)a6-L7-(M7)a7-(L8)b4-(A3)c2-E4  Formula 2 In Formulae 1 and 2, M1, M2, M3, M4, M5, M6, M7, A1, A2, A3, L1, L2, L3, L4, L5, L6, L7, L8, E1, E2, E3, E4, a1, a2, a3, a4, a5, a6, a7, b1, b2, b3, b4, c1, and c2 are the same as defined in the detailed description.

公开(公告)号：US20240239820A1

公开(公告)日：2024-07-18

申请号：US18329976

申请日：2023-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghyun HAN ,  Haengdeog Koh ,  Yoonhyun Kwak ,  Kyungoh Kim ,  Mijeong Kim ,  Jaejun Lee ,  Hasup Lee ,  Kyuhyun IM ,  Sukkoo Hong

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07F7/2224 ,  G03F7/0042 ,  G03F7/0048 ,  G03F7/2004

Abstract: Provided are an organometallic compound represented by one of Formulas 1-1 to 1-4 below.






a resist composition including the same, and a pattern forming method using the same. For descriptions of M11, L11 to L14, a11 to a14, R11 to R14, X11 to X14, n11 to n15, Y11 to Y13, and R15 to R17 in Formulas 1-1 to 1-4, refer to the specification.

公开(公告)号：US20190309415A1

公开(公告)日：2019-10-10

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US11827741B2

公开(公告)日：2023-11-28

申请号：US17546294

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho Noh ,  Insu Lee ,  Songwon Hyun ,  Yoonseok Ko ,  Mijeong Kim ,  Keechang Lee ,  Sangsoo Jee

IPC: C08G59/24 ,  C08K3/013 ,  C08G59/62 ,  C08L63/00

CPC classification number: C08G59/245 ,  C08G59/621 ,  C08K3/013 ,  C08L63/00 ,  C08G2170/00 ,  C08G2190/00 ,  C08K2201/001 ,  C08L2203/206

Abstract: An epoxy compound having an aromatic ring represented by Formula 1 or Formula 2, a composition prepared from the epoxy compound, a semiconductor device prepared from the epoxy compound, an electronic device prepared from the epoxy compound, an article prepared from the epoxy compound, and a method of preparing the epoxy compound:

E1-(M1)a1-(L1)b1-(M2)a2-L2-A1-L3-(M3)a3-(L4)b2-(M4)a4-E2  Formula 1

E3-(A2)c1-(L5)b3-(M5)a5-L6-(M6)a6-L7-(M7)a7-(L8)b4-(A3)c2-E4  Formula 2

In Formulae 1 and 2, M1, M2, M3, M4, M5, M6, M7, A1, A2, A3, L1, L2, L3, L4, L5, L6, L7, L8, E1, E2, E3, E4, a1, a2, a3, a4, a5, a6, a7, b1, b2, b3, b4, c1, and c2 are the same as defined in the detailed description.

公开(公告)号：US10883173B2

公开(公告)日：2021-01-05

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: F17C1/00 ,  F17C13/02 ,  C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.