公开(公告)号：US20230352408A1

公开(公告)日：2023-11-02

申请号：US17936106

申请日：2022-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： MYUNGHOON JUNG ,  WONHYUK HONG ,  INCHAN HWANG ,  GUNHO JO ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L23/5286 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/66439

Abstract: Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source/drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.