公开(公告)号：US11011562B2

公开(公告)日：2021-05-18

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/30 ,  H01L27/146 ,  H04N5/3745 ,  H01L27/142

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US20200075650A1

公开(公告)日：2020-03-05

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/3745

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US11818904B2

公开(公告)日：2023-11-14

申请号：US17373103

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun Choi ,  Kwan Sik Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Man Geun Cho

IPC: H10K39/32 ,  H01L49/02 ,  H04N25/75 ,  H01L27/146

CPC classification number: H10K39/32 ,  H01L28/40 ,  H04N25/75 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US11063090B2

公开(公告)日：2021-07-13

申请号：US16391616

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun Choi ,  Kwan Sik Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Man Geun Cho

IPC: H01L27/30 ,  H04N5/378 ,  H01L49/02 ,  H01L27/146

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.