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公开(公告)号:US11818904B2
公开(公告)日:2023-11-14
申请号:US17373103
申请日:2021-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Jun Choi , Kwan Sik Kim , Chang Hwa Kim , Sang Su Park , Man Geun Cho
IPC: H10K39/32 , H01L49/02 , H04N25/75 , H01L27/146
CPC classification number: H10K39/32 , H01L28/40 , H04N25/75 , H01L27/1463 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14689
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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公开(公告)号:US11063090B2
公开(公告)日:2021-07-13
申请号:US16391616
申请日:2019-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Jun Choi , Kwan Sik Kim , Chang Hwa Kim , Sang Su Park , Man Geun Cho
IPC: H01L27/30 , H04N5/378 , H01L49/02 , H01L27/146
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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公开(公告)号:US11011562B2
公开(公告)日:2021-05-18
申请号:US16402423
申请日:2019-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changhwa Kim , Kwan Sik Kim , Sang Su Park , Beom Suk Lee , Man Geun Cho , Min Jun Choi
IPC: H01L27/30 , H01L27/146 , H04N5/3745 , H01L27/142
Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.
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公开(公告)号:US10998366B2
公开(公告)日:2021-05-04
申请号:US16732561
申请日:2020-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Hyun Yoon , Doo Won Kwon , Kwan Sik Kim , Tae Young Song , Min Jun Choi
IPC: H01L27/146 , H01L27/30 , H01L27/28 , H01L31/024 , H01L51/42 , H01L31/102
Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.
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公开(公告)号:US20200075650A1
公开(公告)日:2020-03-05
申请号:US16402423
申请日:2019-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changhwa Kim , Kwan Sik Kim , Sang Su Park , Beom Suk Lee , Man Geun Cho , Min Jun Choi
IPC: H01L27/146 , H01L27/142 , H04N5/3745
Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.
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公开(公告)号:US10566370B2
公开(公告)日:2020-02-18
申请号:US16018709
申请日:2018-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Hyun Yoon , Doo Won Kwon , Kwan Sik Kim , Tae Young Song , Min Jun Choi
IPC: H01L27/146 , H01L27/30 , H01L27/28 , H01L31/024
Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.
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