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    Semiconductor device including contact structure
    1.
    发明授权
    Semiconductor device including contact structure 有权

    公开(公告)号：US11094593B2

    公开(公告)日：2021-08-17

    申请号：US16169326

    申请日：2018-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hwi Chan Jun ,  Chang Hwa Kim ,  Dae Won Ha

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L23/522 ,  H01L21/8238

    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US10916587B2

    公开(公告)日：2021-02-09

    申请号：US16443233

    申请日：2019-06-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Yon Lee ,  Chang Hwa Kim ,  Jae Ho Kim ,  Sang Chun Park ,  Gwi Deok Ryan Lee ,  Beom Suk Lee ,  Jae Kyu Lee ,  Kazunori Kakehi

    IPC: H01L27/30 ,  H01L27/28

    Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

    Image sensor including color filters
    4.
    发明授权
    Image sensor including color filters 有权

    公开(公告)号：US10784314B2

    公开(公告)日：2020-09-22

    申请号：US16555074

    申请日：2019-08-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Hyun Yoo ,  Eun Mi Kim ,  Joon Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Kyung Rae Byun ,  Sang Hoon Song

    IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/0224 ,  H01L31/0216 ,  H01L51/42

    Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

    SEMICONDUCTOR DEVICE INCLUDING CONTACT STRUCTURE
    5.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CONTACT STRUCTURE 有权

    公开(公告)号：US20210375692A1

    公开(公告)日：2021-12-02

    申请号：US17398623

    申请日：2021-08-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HWI CHAN JUN ,  Chang Hwa Kim ,  Dae Won Ha

    IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L23/522 ,  H01L27/088

    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

    Image sensor and method for fabricating the same
    8.
    发明授权
    Image sensor and method for fabricating the same 有权

    公开(公告)号：US11063090B2

    公开(公告)日：2021-07-13

    申请号：US16391616

    申请日：2019-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Jun Choi ,  Kwan Sik Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Man Geun Cho

    IPC: H01L27/30 ,  H04N5/378 ,  H01L49/02 ,  H01L27/146

    Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

    Semiconductor device including contact structure
    10.
    发明授权
    Semiconductor device including contact structure 有权

    公开(公告)号：US10153212B2

    公开(公告)日：2018-12-11

    申请号：US15449302

    申请日：2017-03-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hwi Chan Jun ,  Chang Hwa Kim ,  Dae Won Ha

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/522

    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

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