公开(公告)号：US20240251553A1

公开(公告)日：2024-07-25

申请号：US18493122

申请日：2023-10-24

申请人： Samsung Electronics Co., Ltd.

发明人： Young Bong SHIN ,  Ji Hoon LEE ,  Mi Hye KANG ,  Jun Hee NA ,  Phil Ouk NAM ,  Tae Gi YEH

IPC分类号： H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC分类号： H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

摘要： A semiconductor memory device includes a stack structure on a substrate, extending in a first direction, and including gate electrode layers and insulating layers stacked alternately with each other, a vertical structure including a vertical channel film extending in a second direction crossing the first direction and a channel insulating film disposed on the vertical channel film and having first areas adjacent to the insulating layers and second areas adjacent to the gate electrode layers, and a high-k film on the channel insulating film. The high-k film includes a first high-k metal oxide film between the first areas and the insulating layers and in contact with the first areas and a second high-k metal oxide film between the second areas and the gate electrode layers and in contact with the second areas, and the first and second high-k metal oxide films include different metal materials.