公开(公告)号：US20170222006A1

公开(公告)日：2017-08-03

申请号：US15298746

申请日：2016-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan SUH ,  Yong Suk TAK ,  Gi Gwan PARK ,  Mi Seon PARK ,  Moon Seung YANG ,  Seung Hun LEE ,  Poren TANG

IPC: H01L29/423 ,  H01L29/78 ,  H01L23/528

CPC classification number: H01L29/42376 ,  H01L23/5283 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/66439 ,  H01L29/7831

Abstract: A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern