公开(公告)号：US20170317213A1

公开(公告)日：2017-11-02

申请号：US15410238

申请日：2017-01-19

申请人： Samsung Electronics Co., Ltd.

发明人： Mi-Seon PARK ,  Gi-Gwan PARK ,  Tae-Jong LEE ,  Yong-Suk TAK ,  Ki-Yeon PARK

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02

CPC分类号： H01L29/7851 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure directly on a sidewall of the gate structure, and a source/drain layer on a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a silicon oxycarbonitride (SiOCN) pattern and a silicon dioxide (SiO2) pattern sequentially stacked.