公开(公告)号：US20230361160A1

公开(公告)日：2023-11-09

申请号：US17988135

申请日：2022-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYOOHO JUNG ,  Min Hyuk PARK ,  HANJIN LIM ,  Geun Hyeong PARK ,  Ju Yong PARK

IPC: H01L21/8242

CPC classification number: H01L28/56 ,  H01L28/60

Abstract: Disclosed is a semiconductor device comprising a substrate, a capacitor contact structure electrically connected to the substrate, a bottom electrode connected to the capacitor contact structure, a capacitor dielectric layer on the bottom electrode, and a top electrode on the capacitor dielectric layer. The top electrode includes an interface layer on the capacitor dielectric layer and an electrode layer on the interface layer. The interface layer includes a first layer on the capacitor dielectric layer and a second layer on the first layer. The first layer includes molybdenum and oxygen. The second layer includes molybdenum and nitrogen. The electrode layer includes titanium and nitrogen. A thickness of the interface layer is less than a thickness of the capacitor dielectric layer and a thickness of the electrode layer.