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    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    2.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20240030278A1

    公开(公告)日：2024-01-25

    申请号：US18108629

    申请日：2023-02-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JUNGMIN PARK ,  HANJIN LIM ,  HYUNGSUK JUNG

    IPC: H01L21/02

    CPC classification number: H01L28/91 ,  H01L28/65

    Abstract: A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.

    SEMICONDUCTOR DEVICES
    4.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20240363678A1

    公开(公告)日：2024-10-31

    申请号：US18767018

    申请日：2024-07-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JUNGMIN PARK ,  HANJIN LIM ,  HYUNGSUK JUNG

    IPC: H01G4/30 ,  H10B12/00

    CPC classification number: H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H10B12/482 ,  H01L28/82

    Abstract: A semiconductor device includes a capacitor. The capacitor includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes a first dielectric layer and a second dielectric layer that are interposed between the bottom electrode and the top electrode and are stacked in the first direction. The first dielectric layer is anti-ferroelectric, and the second dielectric layer is ferroelectric. A thermal expansion coefficient of the first dielectric layer is greater than a thermal expansion coefficient of the second dielectric layer.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190013391A1

    公开(公告)日：2019-01-10

    申请号：US15995049

    申请日：2018-05-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

    IPC: H01L29/51 ,  H01L29/06 ,  H01L29/15 ,  H01L21/762

    Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

    SEMICONDUCTOR DEVICE
    6.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230361160A1

    公开(公告)日：2023-11-09

    申请号：US17988135

    申请日：2022-11-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KYOOHO JUNG ,  Min Hyuk PARK ,  HANJIN LIM ,  Geun Hyeong PARK ,  Ju Yong PARK

    IPC: H01L21/8242

    CPC classification number: H01L28/56 ,  H01L28/60

    Abstract: Disclosed is a semiconductor device comprising a substrate, a capacitor contact structure electrically connected to the substrate, a bottom electrode connected to the capacitor contact structure, a capacitor dielectric layer on the bottom electrode, and a top electrode on the capacitor dielectric layer. The top electrode includes an interface layer on the capacitor dielectric layer and an electrode layer on the interface layer. The interface layer includes a first layer on the capacitor dielectric layer and a second layer on the first layer. The first layer includes molybdenum and oxygen. The second layer includes molybdenum and nitrogen. The electrode layer includes titanium and nitrogen. A thickness of the interface layer is less than a thickness of the capacitor dielectric layer and a thickness of the electrode layer.

    SEMICONDUCTOR DEVICES
    7.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230163160A1

    公开(公告)日：2023-05-25

    申请号：US17809727

    申请日：2022-06-29

    Applicant: SAMSUNG ELECTRONICS. CO., LTD.

    Inventor： JUNGMIN PARK ,  HANJIN LIM ,  HYUNGSUK JUMG

    IPC: H01L49/02 ,  H01L27/108

    CPC classification number: H01L28/55 ,  H01L28/75 ,  H01L27/10885 ,  H01L28/65 ,  H01L28/82

    Abstract: A semiconductor device includes a capacitor. The capacitor includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes a first dielectric layer and a second dielectric layer that are interposed between the bottom electrode and the top electrode and are stacked in the first direction. The first dielectric layer is anti-ferroelectric, and the second dielectric layer is ferroelectric. A thermal expansion coefficient of the first dielectric layer is greater than a thermal expansion coefficient of the second dielectric layer.

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