公开(公告)号：US10298045B2

公开(公告)日：2019-05-21

申请号：US15643171

申请日：2017-07-06

申请人： Samsung Electronics Co., Ltd.

发明人： Hoon Jung ,  Joo Hoan Do ,  Min Woo Song ,  Sung Won Moon ,  Hyun Seok Lee ,  Eui Chan Jung ,  Moo Young Kim ,  Hyo Seok Na ,  Ji Woo Lee

IPC分类号： H02J7/00 ,  G01R31/36

摘要： A method of controlling an electronic device is provided which includes electrically connecting a battery with an external power source using a first switch such that a first portion of a first current supplied from the external power source is supplied to a system circuit of the electronic device and a second portion of the first current is supplied to the battery, determining whether a specified condition is satisfied, electrically disconnecting the battery from the external power source using the first switch and electrically connecting the battery with a resistor using a second switch, if the specified condition is satisfied, verifying an electrical characteristic of a current applied to the resistor while the battery is electrically disconnected from the external power source and is electrically connected with the resistor, and determining whether an operation of the battery is abnormal, based at least on a part of the electrical characteristic.

公开(公告)号：US11417772B2

公开(公告)日：2022-08-16

申请号：US16778114

申请日：2020-01-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min Hee Cho ,  Woo Bin Song ,  Hyun Mog Park ,  Min Woo Song

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/45

摘要： A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.

公开(公告)号：US09147237B2

公开(公告)日：2015-09-29

申请号：US14070987

申请日：2013-11-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min Woo Song ,  Je Woo Moon

IPC分类号： G06K9/40 ,  G06T5/20 ,  G06T5/00

CPC分类号： G06T5/20 ,  G06T5/00 ,  G06T2207/20012 ,  G06T2207/20104

摘要： An image processing device includes a region detector configured to receive input image data and to determine a region in which the input image data belongs to among a plurality of regions; and an operation unit configured to perform an operation on the input image data using a coefficient corresponding to the determined region among a plurality of different coefficients, which are predetermined to respectively correspond to the plurality of regions.

摘要翻译： 一种图像处理装置，包括：区域检测器，被配置为接收输入图像数据并确定输入图像数据属于多个区域的区域; 以及操作单元，被配置为使用预定分别对应于所述多个区域的多个不同系数中的与所确定的区域相对应的系数对所述输入图像数据执行操作。

公开(公告)号：US10340358B2

公开(公告)日：2019-07-02

申请号：US15951639

申请日：2018-04-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/285

摘要： A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

公开(公告)号：US20190081152A1

公开(公告)日：2019-03-14

申请号：US15951639

申请日：2018-04-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/4966 ,  H01L21/02164 ,  H01L21/28088 ,  H01L21/28167 ,  H01L21/28518 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

摘要： A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from. the first barrier film.