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公开(公告)号:US20230352532A1
公开(公告)日:2023-11-02
申请号:US18347090
申请日:2023-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Cho-eun LEE , Seok-hoon KIM , Sang-gil LEE , Edward CHO , Min-hee CHOI , Seung-hun LEE
IPC: H01L29/08 , H01L29/78 , H01L21/8238 , H01L21/8234
CPC classification number: H01L29/0847 , H01L29/785 , H01L21/823814 , H01L21/823425 , H01L21/823418
Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.
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公开(公告)号:US20210408237A1
公开(公告)日:2021-12-30
申请号:US17470288
申请日:2021-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Cho-eun LEE , Seok-hoon KIM , Sang-gil LEE , Edward Namkyu CHO , Min-hee CHOI , Seung-hun LEE
IPC: H01L29/08 , H01L29/78 , H01L21/8238 , H01L21/8234
Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.
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