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公开(公告)号：US11646225B2
公开(公告)日：2023-05-09
申请号：US17039431
申请日：2020-09-30
发明人： Myeong-Dong Lee , Keunnam Kim , Dongryul Lee , Minseong Choi , Jimin Choi , Yong Kwan Kim , Changhyun Cho , Yoosang Hwang
IPC分类号： H01L27/10 , H01L21/768 , H01L27/108 , H01L23/532 , H01L23/535
CPC分类号： H01L21/7682 , H01L21/76805 , H01L21/76849 , H01L21/76895 , H01L23/535 , H01L23/5329 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876
摘要： According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.
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公开(公告)号：US10211091B2
公开(公告)日：2019-02-19
申请号：US15334469
申请日：2016-10-26
发明人： Myeong-Dong Lee , Keunnam Kim , Dongryul Lee , Minseong Choi , Jimin Choi , Yong Kwan Kim , Changhyun Cho , Yoosang Hwang
IPC分类号： H01L21/76 , H01L21/768 , H01L23/532 , H01L23/535 , H01L27/108
摘要： According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.
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公开(公告)号：US10796950B2
公开(公告)日：2020-10-06
申请号：US16238172
申请日：2019-01-02
发明人： Myeong-Dong Lee , Keunnam Kim , Dongryul Lee , Minseong Choi , Jimin Choi , Yong Kwan Kim , Changhyun Cho , Yoosang Hwang
IPC分类号： H01L21/76 , H01L21/768 , H01L27/108 , H01L23/532 , H01L23/535
摘要： According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.
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