公开(公告)号：US20230100548A1

公开(公告)日：2023-03-30

申请号：US17742879

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihan Ko ,  Sangwon Park ,  Minyong Kim ,  Jekyung Choi ,  Junho Choi

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/24 ,  G11C16/10 ,  G11C16/26

Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.

公开(公告)号：US11456557B2

公开(公告)日：2022-09-27

申请号：US17277340

申请日：2019-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwon Cho ,  Gyunghoon Lee ,  Minyong Kim ,  Samyeol Kang

IPC: H05K5/00 ,  G06F1/16 ,  H01R13/52

Abstract: According to an embodiment, disclosed is an electronic device that includes an external interface module including a printed circuit board and at least one part disposed on the printed circuit board, a protective structure including at least one hole area that isolates at least a portion of the at least one part, and a housing that provides at least a bottom portion on which the protective structure is seated. Besides, it may be permissible to prepare various other embodiments speculated through the specification.

公开(公告)号：US12100452B2

公开(公告)日：2024-09-24

申请号：US17742879

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihan Ko ,  Sangwon Park ,  Minyong Kim ,  Jekyung Choi ,  Junho Choi

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26

CPC classification number: G11C16/0433 ,  G11C16/08 ,  G11C16/102 ,  G11C16/24 ,  G11C16/26

Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.