公开(公告)号：US12229936B2

公开(公告)日：2025-02-18

申请号：US17721616

申请日：2022-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Joon Lee ,  Il Kwon Kim ,  Sang Gul Park ,  Chang Wook Jeong ,  Moon Hyun Cha ,  Sat Byul Kim

IPC: G06T7/00 ,  G06T1/00 ,  G06T3/40 ,  G06T3/4053 ,  G06T5/00 ,  G06T5/20 ,  G06T5/70 ,  G06T11/00

Abstract: Some example embodiments relate to a super resolution scanning electron microscope (SEM) image implementing device and/or a method thereof. Provided a super resolution scanning electron microscope (SEM) image implementing device comprising a processor configured to crop a low resolution SEM image to generate a first cropped image and a second cropped image, to upscale the first cropped image and the second cropped image to generate a first upscaled image and a second upscaled image, and to cancel noise from the first upscaled image and the second upscaled image to generate a first noise canceled image and a second noise canceled image.

公开(公告)号：US12204835B2

公开(公告)日：2025-01-21

申请号：US16278767

申请日：2019-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Hyun Cha ,  Higashi Kotakemori ,  Hiroyuki Kubotera

IPC: G06F30/3308 ,  G06F30/327 ,  G06F30/33 ,  G06T17/10 ,  G06T17/20

Abstract: A non-transitory computer-readable storage medium stores instructions. When executed by a computer, the instructions cause the computer to perform a method for a semiconductor design simulation. The method may include generating first polygon meshes, transforming the first polygon meshes to first level sets, performing logical operations on the first level sets to generate second level sets, and transforming the second level sets to second polygon meshes.