公开(公告)号：US20140070325A1

公开(公告)日：2014-03-13

申请号：US13960977

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-Hong KIM ,  Moon-Kyun SONG ,  Seok-Jun WON

IPC: H01L27/088 ,  H01L21/28

CPC classification number: H01L27/088 ,  H01L21/28008 ,  H01L21/823807 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Abstract translation: 半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一 界面膜和第一电介质膜上的第一栅电极。