公开(公告)号：US20140070325A1

公开(公告)日：2014-03-13

申请号：US13960977

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-Hong KIM ,  Moon-Kyun SONG ,  Seok-Jun WON

IPC: H01L27/088 ,  H01L21/28

CPC classification number: H01L27/088 ,  H01L21/28008 ,  H01L21/823807 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Abstract translation: 半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一 界面膜和第一电介质膜上的第一栅电极。

公开(公告)号：US20130280881A1

公开(公告)日：2013-10-24

申请号：US13923470

申请日：2013-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weon-Hong KIM ,  Min-Woo SONG ,  Jung-Min PARK

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31641 ,  H01L27/10852 ,  H01L28/40

Abstract: A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.

Abstract translation: 一种包括衬底的半导体器件; 基底上的底电极; 所述第一电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第一金属氧化物; 在所述第一电介质层上的第二电介质层，所述第二电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第二金属氧化物，其中所述第一金属氧化物和所述第二金属 氧化物是不同的材料; 第二电介质层上的第三电介质层，第三电介质层包括金属碳氮氧化物; 以及第三电介质层上的上电极。