公开(公告)号：US20210028160A1

公开(公告)日：2021-01-28

申请号：US17038292

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Young LEE ,  Jong-hoon JUNG ,  Myoung-ho KANG ,  Jung-ho DO

IPC: H01L27/02 ,  G11C11/419 ,  G11C11/40 ,  H01L23/528 ,  H01L27/105 ,  H01L27/118

Abstract: In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.

公开(公告)号：US20180108646A1

公开(公告)日：2018-04-19

申请号：US15674931

申请日：2017-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-young LEE ,  Jong-hoon JUNG ,  Myoung-ho KANG ,  Jung-ho DO

IPC: H01L27/02 ,  G11C11/40 ,  H01L27/105 ,  H01L27/118 ,  H01L23/528

Abstract: In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.