公开(公告)号：US10096714B2

公开(公告)日：2018-10-09

申请号：US15446322

申请日：2017-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yup Chung ,  Myung-yoon Um ,  Dong-ho Cha ,  Jung-gun You ,  Gi-gwan Park

IPC: H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.

公开(公告)号：US10483399B2

公开(公告)日：2019-11-19

申请号：US16150795

申请日：2018-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-yup Chung ,  Myung-yoon Um ,  Dong-ho Cha ,  Jung-gun You ,  Gi-gwan Park

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/66 ,  H01L21/84 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.