IMAGING DEVICES AND IMAGING APPARATUSES

    公开(公告)号:US20210273188A1

    公开(公告)日:2021-09-02

    申请号:US17186641

    申请日:2021-02-26

    Abstract: An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, R1 to R4, Ar3, R1 to R3, Ar1 and Ar2, and G1 and G2 are as defined in the specification.

    DEVICE AND SENSOR AND ELECTRONIC DEVICE

    公开(公告)号:US20210066628A1

    公开(公告)日:2021-03-04

    申请号:US16984510

    申请日:2020-08-04

    Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

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