公开(公告)号：US09754684B2

公开(公告)日：2017-09-05

申请号：US14640005

申请日：2015-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chaohong Hu ,  Hongzhong Zheng ,  Prashant Jayaprakash Nair

IPC: H03M13/00 ,  G11C29/52 ,  H03M13/19 ,  G06F11/10 ,  G11C29/04

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G11C2029/0411 ,  H03M13/19

Abstract: In an Error Correction Code (ECC)-based memory, a Single Error Correction Double Error Detection (SECDED) scheme is used with data aggregation to correct more than one error in a memory word received in a memory burst. By completely utilizing the Hamming distance of the SECDED (128,120) code, 8 ECC bits can potentially correct one error in 120 data bits. Each memory burst is effectively “expanded” from its actual 64 data bits to 120 data bits by “sharing” additional 56 data bits from all of the other related bursts. When a cache line of 512 bits is read, the SECDED (128,120) code is used in conjunction with all the received 64 ECC bits to correct more than one error in the actual 64 bits of data in a memory word. The data mapping of the present disclosure translates to a higher rate of error correction than the existing (72,64) SECDED code.