公开(公告)号：US20160315193A1

公开(公告)日：2016-10-27

申请号：US15138914

申请日：2016-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGWOO KIM ,  SEUNGHUN LEE ,  SUNJUNG KIM ,  HYUNJUNG LEE ,  BONYOUNG KOO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/165 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/7853

Abstract: A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure. An epitaxially grown epitxial layer can be on the lower and upper portions.

Abstract translation: 半导体器件可以包括从衬底的表面突出的衬底和鳍体。 翅片本体可以包括具有第一格子结构的下部和与下部分开边界的上部，上部具有不同于第一格子结构的第二格子结构。 外延生长的外延层可以在下部和上部。