公开(公告)号：US20250159885A1

公开(公告)日：2025-05-15

申请号：US18743326

申请日：2024-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGYEOM KIM ,  HYUNMIN KIM ,  JUSEONG MIN ,  DONGSIK OH ,  KANGOH YUN ,  TAEKKYU YOON ,  WONHO CHANG ,  SEUNGWOOK CHOI ,  JEEHOON HAN

IPC: H10B43/27 ,  H01L25/065 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device includes a first gate dielectric film on a first channel top surface of a substrate, wherein the first channel top surface is in a first region of the substrate, a first gate electrode on the first gate dielectric film, first offset insulating spacers respectively on opposing sidewalls of each of the first gate dielectric film and the first gate electrode, first main insulating spacers respectively on the opposing sidewalls of the first gate electrode, wherein the first offset insulating spacers are between the first main insulating spacers, and a pair of first source/drain regions in the substrate on opposing sides of the first gate electrode, wherein a top surface of each of the pair of first source/drain regions includes at least two first-voltage substrate step portions having respective surfaces that are lower than the first channel top surface of the substrate in a vertical direction.