公开(公告)号：US10418250B2

公开(公告)日：2019-09-17

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun Kim ,  Yuri Barsukov ,  Vladimir Volynets ,  Dali Liu ,  Sang-jin An ,  Beom-jin Yoo ,  Sang-heon Lee ,  Shamik Patel

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

公开(公告)号：US09633727B2

公开(公告)日：2017-04-25

申请号：US14830377

申请日：2015-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Man Chang ,  In-gyu Baek ,  Sang-heon Lee ,  Hyun-sang Hwang

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0064 ,  G11C2013/0092

Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.