SEMICONDUCTOR DEVICES
    1.
    发明申请

    公开(公告)号:US20190165088A1

    公开(公告)日:2019-05-30

    申请号:US16003675

    申请日:2018-06-08

    Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

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