公开(公告)号：US20230260783A1

公开(公告)日：2023-08-17

申请号：US18306463

申请日：2023-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-woon PARK ,  Jin-su LEE ,  Hyung-suk JUNG

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/0228 ,  C23C16/045 ,  H01L21/76843 ,  H01L28/91 ,  H01L21/02296 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/0262

Abstract: A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

公开(公告)号：US20210273039A1

公开(公告)日：2021-09-02

申请号：US17324492

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo KIM ,  Seung-min RYU ,  Chang-su WOO ,  Hyung-suk JUNG ,  Kyu-ho CHO ,  Youn-joung CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US20210225636A1

公开(公告)日：2021-07-22

申请号：US17224365

申请日：2021-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-woon PARK ,  Jin-su LEE ,  Hyung-suk JUNG

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/768 ,  H01L49/02 ,  H01L21/285

Abstract: A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

公开(公告)号：US20210202693A1

公开(公告)日：2021-07-01

申请号：US17200081

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Sang-yeol KANG ,  Youn-soo KIM ,  Jin-su LEE ,  Hyung-suk JUNG ,  Kyu-ho CHO

IPC: H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/285 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.