公开(公告)号：US20230014037A1

公开(公告)日：2023-01-19

申请号：US17690154

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euntaek Jung ,  Jaeho Kim ,  Joonsung Kim ,  Jiwon Kim ,  Sukkang Sung ,  Sangdon Lee ,  Jong-Min Lee

IPC: H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582 ,  H01L23/528 ,  G11C16/04

Abstract: A semiconductor device includes an electrode structure including electrodes stacked on a substrate and an insulating pattern on an uppermost electrode of the electrodes, a vertical structure that penetrates the electrode structure and is connected to the substrate, a first insulating layer on the electrode and the vertical structure, a conductive pattern that penetrates the first insulating layer and is connected to the vertical structure, an upper horizontal electrode on the conductive pattern, and an upper semiconductor pattern that penetrates the upper horizontal electrode and is connected to the conductive pattern. The conductive pattern has a first side surface on the vertical structure and a second side surface on the insulating pattern.

公开(公告)号：US20220399368A1

公开(公告)日：2022-12-15

申请号：US17701304

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Kim ,  Sangdon Lee ,  Sungmin Hwang ,  Sukkang Sung

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L23/48

Abstract: A semiconductor device includes a stack structure, first separation patterns passing through the stack structure, a second separation pattern passing through at least a portion of the stack structure between the first separation patterns, and a cutting channel structure passing through the stack structure and having an end portion partially cut by the second separation pattern. A channel layer of the cutting channel structure has a ring shape cut by the second separation pattern to have end portions of the channel layer which are spaced apart from each other.