公开(公告)号：US11437246B2

公开(公告)日：2022-09-06

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Kim ,  Youngtak Kim ,  Jungah Kim ,  Hoon Han ,  Geunjoo Baek ,  Chisung Ihn ,  Sangmoon Yun

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/311

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.