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公开(公告)号：US11082652B2
公开(公告)日：2021-08-03
申请号：US16225642
申请日：2018-12-19
发明人： Younggu Jin , Youngchan Kim , Min-Sun Keel
IPC分类号： H04N5/3745 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/359 , G01S7/4863
摘要： Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.
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公开(公告)号：US11644552B2
公开(公告)日：2023-05-09
申请号：US16921060
申请日：2020-07-06
发明人： Younggu Jin , Min-Sun Keel , Daeyun Kim , Youngchan Kim
IPC分类号： G01S7/48 , G01S7/486 , G01S17/894 , G01S7/481 , G01S7/4863 , G01S17/18
CPC分类号： G01S7/4868 , G01S7/4815 , G01S7/4863 , G01S17/18 , G01S17/894
摘要： An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.
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公开(公告)号：US11627266B2
公开(公告)日：2023-04-11
申请号：US17173290
申请日：2021-02-11
发明人： Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号： H04N5/369 , H04N5/341 , G01S7/4865 , G01S7/4863 , G01S17/894
摘要： A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.
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4.发明授权公开(公告)号：US11437246B2
公开(公告)日：2022-09-06
申请号：US17008736
申请日：2020-09-01
发明人： Youngchan Kim , Youngtak Kim , Jungah Kim , Hoon Han , Geunjoo Baek , Chisung Ihn , Sangmoon Yun
IPC分类号： H01L21/321 , H01L21/3213 , H01L21/306 , H01L21/311
摘要： Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.
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公开(公告)号：US11798973B2
公开(公告)日：2023-10-24
申请号：US18155419
申请日：2023-01-17
发明人： Younggu Jin , Youngchan Kim , Taesub Jung , Yonghun Kwon , Moosup Lim
IPC分类号： H01L27/146 , G01S7/4865 , G01B11/22 , G01S17/894
CPC分类号： H01L27/14641 , G01B11/22 , G01S7/4865 , G01S17/894 , H01L27/1463 , H01L27/14612
摘要： A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.
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公开(公告)号：US11290673B2
公开(公告)日：2022-03-29
申请号：US16876567
申请日：2020-05-18
发明人： Younggu Jin , Youngchan Kim , Moosup Lim
IPC分类号： H04N5/378 , H01L27/146 , H04N5/372 , H04N5/3745 , H04N5/369
摘要： According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.
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公开(公告)号：US11729524B2
公开(公告)日：2023-08-15
申请号：US17726207
申请日：2022-04-21
发明人： Younggu Jin , Youngchan Kim , Sung-ho Choi
IPC分类号： H04N25/531 , H04N25/58 , H04N25/75 , H04N25/77 , H04N25/533 , G01S7/486 , H04N25/766
CPC分类号： H04N25/531 , H04N25/533 , H04N25/58 , H04N25/75 , H04N25/766 , H04N25/77
摘要： Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.
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公开(公告)号：US11581357B2
公开(公告)日：2023-02-14
申请号：US16778122
申请日：2020-01-31
发明人： Younggu Jin , Youngchan Kim , Taesub Jung , Yonghun Kwon , Moosup Lim
IPC分类号： H01L27/146 , G01S7/4865 , G01B11/22 , G01S17/894
摘要： A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.
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9.发明申请公开(公告)号：US20190281241A1
公开(公告)日：2019-09-12
申请号：US16225642
申请日：2018-12-19
发明人： Younggu Jin , Youngchan Kim , Min-Sun Keel
IPC分类号： H04N5/369 , H04N5/374 , H04N5/359 , H04N5/378 , H04N5/3745
摘要： Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.
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公开(公告)号：US20220021831A1
公开(公告)日：2022-01-20
申请号：US17173290
申请日：2021-02-11
发明人： Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号： H04N5/369 , H04N5/341 , G01S17/894 , G01S7/4863 , G01S7/4865
摘要： A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.
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