公开(公告)号：US20250011650A1

公开(公告)日：2025-01-09

申请号：US18750176

申请日：2024-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol HAM ,  Byungjoon KANG ,  Sangwan KIM ,  Sungmin KIM ,  Insun PARK ,  Gayoung SONG ,  Jungmin OH ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

Abstract: Provided are an etching composition, a method of etching a metal-containing film using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition includes an oxidizing agent, an acid, and a selective etching inhibitor, wherein the oxidizing agent is metal-free, the selective etching inhibitor includes a copolymer including a first repeating unit and a second repeating unit, the first repeating unit is different from the second repeating unit, and the first repeating unit is a nitrogen-containing repeating unit.