公开(公告)号：US20250011650A1

公开(公告)日：2025-01-09

申请号：US18750176

申请日：2024-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol HAM ,  Byungjoon KANG ,  Sangwan KIM ,  Sungmin KIM ,  Insun PARK ,  Gayoung SONG ,  Jungmin OH ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

Abstract: Provided are an etching composition, a method of etching a metal-containing film using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition includes an oxidizing agent, an acid, and a selective etching inhibitor, wherein the oxidizing agent is metal-free, the selective etching inhibitor includes a copolymer including a first repeating unit and a second repeating unit, the first repeating unit is different from the second repeating unit, and the first repeating unit is a nitrogen-containing repeating unit.

公开(公告)号：US20240318078A1

公开(公告)日：2024-09-26

申请号：US18586037

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon KANG ,  Sungmin KIM ,  Minjae SUNG ,  Gayoung SONG ,  Jungmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Cheol HAM ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

CPC classification number: C09K13/06 ,  H01L21/32134

Abstract: An etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.