公开(公告)号：US20240281193A1

公开(公告)日：2024-08-22

申请号：US18625967

申请日：2024-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doyoung KIM ,  Sanghyup LEE ,  Sangwon HWANG

IPC: G06F3/147 ,  G09G3/36

CPC classification number: G06F3/147 ,  G09G3/36 ,  G09G2320/0242 ,  G09G2320/066 ,  G09G2320/0666 ,  G09G2320/0693 ,  G09G2354/00 ,  G09G2360/144 ,  G09G2370/022

Abstract: A server includes: a communication interface; and at least one processor configured to: receive, from a plurality of display devices, image quality setting values of each display device, sensing values of a surrounding environment obtained from each display device, and information on an image quality mode of each display device, identify, based on the received image quality setting values and the sensing values, an optimal image quality setting value for each sensing value, identify, based on the received information on the image quality mode, a display device in which the image quality mode is set in a pre-set mode from among the plurality of display devices, and transmit, to the identified display device and based on the optimal image quality setting value for each sensing value, an optimal image quality setting value corresponding to sensing values of the surrounding environment sensed by the identified display device.

公开(公告)号：US20220208294A1

公开(公告)日：2022-06-30

申请号：US17467968

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok LEE ,  Hwangju SONG ,  Namyong KIM ,  Jaeeun YOON ,  Sangmu LEE ,  Sangwon HWANG

IPC: G11C29/42 ,  G11C29/12 ,  G11C16/10 ,  G11C16/26 ,  G11C16/34

Abstract: A storage device for performing a reliability check by using error correction code (ECC) data is provided. The storage device includes a memory controller configured to detect the number of errors of second read data read out by a second read operation, based on ECC data of first read data read by a first read operation of a memory device. The memory controller includes a memory check circuit that includes a counter configured to count states of memory cells, a comparator configured to compare respective count numbers of the states with one another, and a register configured to store the number of errors based on a result of the comparison.

公开(公告)号：US20220230687A1

公开(公告)日：2022-07-21

申请号：US17714552

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho SEO ,  Sangwon HWANG ,  Suk-Eun KANG ,  Haneol JANG ,  Youngwook JEONG ,  Wanha HWANG

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

公开(公告)号：US20210225451A1

公开(公告)日：2021-07-22

申请号：US17098590

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho SEO ,  Sangwon HWANG ,  Suk-Eun KANG ,  Haneol JANG ,  Youngwook JEONG ,  Wanha HWANG

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/08 ,  G11C16/24 ,  G11C16/34

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.