公开(公告)号：US20170221546A1

公开(公告)日：2017-08-03

申请号：US15413907

申请日：2017-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoon Loh ,  Hoyoung Song ,  Sangwoong Shin

IPC: G11C11/406 ,  G06F3/06 ,  G11C11/4096 ,  G11C11/4091 ,  G11C11/408

CPC classification number: G11C11/40615 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0673 ,  G11C11/40611 ,  G11C11/40618 ,  G11C11/4087 ,  G11C11/4091 ,  G11C11/4096

Abstract: A volatile memory device includes a refresh controller configured to control a hidden refresh operation performed on a first portion of memory cells while a valid operation is performed on a second portion of the memory cells. The volatile memory device is configured to perform a regular refresh operation in response to receiving a refresh command. The refresh controller is configured to generate refresh information using a performance indicator of the hidden refresh operation during a first part of a reference time. The volatile memory device is configured to perform a desired number of the regular refresh operation during a remaining part of the reference time based on the refresh information. The desired number of the regular refresh operation is an integer based on a difference between a target number of refresh operations during the reference time and a count value of the hidden refresh operation during the reference time.

公开(公告)号：US10658023B2

公开(公告)日：2020-05-19

申请号：US16379167

申请日：2019-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoon Loh ,  Hoyoung Song ,  Sangwoong Shin

IPC: G11C7/00 ,  G11C11/406 ,  G06F3/06 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4096

Abstract: A volatile memory device includes a refresh controller configured to control a hidden refresh operation performed on a first portion of memory cells while a valid operation is performed on a second portion of the memory cells. The volatile memory device is configured to perform a regular refresh operation in response to receiving a refresh command. The refresh controller is configured to generate refresh information using a performance indicator of the hidden refresh operation during a first part of a reference time. The volatile memory device is configured to perform a desired number of the regular refresh operation during a remaining part of the reference time based on the refresh information. The desired number of the regular refresh operation is an integer based on a difference between a target number of refresh operations during the reference time and a count value of the hidden refresh operation during the reference time.

公开(公告)号：US10297306B2

公开(公告)日：2019-05-21

申请号：US15900070

申请日：2018-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoon Loh ,  Hoyoung Song ,  Sangwoong Shin

IPC: G11C11/06 ,  G11C11/406 ,  G06F3/06 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4096

Abstract: A volatile memory device includes a refresh controller configured to control a hidden refresh operation performed on a first portion of memory cells while a valid operation is performed on a second portion of the memory cells. The volatile memory device is configured to perform a regular refresh operation in response to receiving a refresh command. The refresh controller is configured to generate refresh information using a performance indicator of the hidden refresh operation during a first part of a reference time. The volatile memory device is configured to perform a desired number of the regular refresh operation during a remaining part of the reference time based on the refresh information. The desired number of the regular refresh operation is an integer based on a difference between a target number of refresh operations during the reference time and a count value of the hidden refresh operation during the reference time.

公开(公告)号：US09928895B2

公开(公告)日：2018-03-27

申请号：US15413907

申请日：2017-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoon Loh ,  Hoyoung Song ,  Sangwoong Shin

IPC: G11C7/00 ,  G11C11/406 ,  G06F3/06 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4096

CPC classification number: G11C11/40615 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0673 ,  G11C11/40611 ,  G11C11/40618 ,  G11C11/4087 ,  G11C11/4091 ,  G11C11/4096

Abstract: A volatile memory device includes a refresh controller configured to control a hidden refresh operation performed on a first portion of memory cells while a valid operation is performed on a second portion of the memory cells. The volatile memory device is configured to perform a regular refresh operation in response to receiving a refresh command. The refresh controller is configured to generate refresh information using a performance indicator of the hidden refresh operation during a first part of a reference time. The volatile memory device is configured to perform a desired number of the regular refresh operation during a remaining part of the reference time based on the refresh information. The desired number of the regular refresh operation is an integer based on a difference between a target number of refresh operations during the reference time and a count value of the hidden refresh operation during the reference time.