公开(公告)号：US20170213710A1

公开(公告)日：2017-07-27

申请号：US15260910

申请日：2016-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/335 ,  G06T7/00

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/32972 ,  H04N5/2252

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20190164731A1

公开(公告)日：2019-05-30

申请号：US16262024

申请日：2019-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/225

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20230066724A1

公开(公告)日：2023-03-02

申请号：US17673903

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin OH ,  Doo Young GWAK ,  Tae Hyun KIM ,  Sang Ki NAM ,  Jae Ho JANG ,  Jin Kyou CHOI

IPC: H01J37/32 ,  H01L21/3065

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.