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    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20250079305A1

    公开(公告)日：2025-03-06

    申请号：US18648097

    申请日：2024-04-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun Soo KIM ,  Sung Ho JANG

    IPC: H01L23/528 ,  H10B41/30 ,  H10B43/30

    Abstract: A capacitor-less semiconductor memory device and a method for fabricating the same are provided. The semiconductor memory device includes a first metal-oxide semiconductor film, a second metal-oxide semiconductor film spaced apart from the first metal-oxide semiconductor film, a first gate electrode intersecting the first metal-oxide semiconductor film and the second metal-oxide semiconductor film, a first gate dielectric film interposed between the first metal-oxide semiconductor film and the first gate electrode, a charge storage film in the first gate dielectric film, the charge storage film extending along at least a portion of the first metal-oxide semiconductor film and connected to the second metal-oxide semiconductor film, a second gate electrode spaced apart from the first gate electrode and intersecting the second metal-oxide semiconductor film, and a second gate dielectric film interposed between the second metal-oxide semiconductor film and the second gate electrode.

    APPARATUS FOR SUBSTRATE DICING AND METHOD THEROF
    4.
    发明申请
    APPARATUS FOR SUBSTRATE DICING AND METHOD THEROF 有权

    公开(公告)号：US20230102791A1

    公开(公告)日：2023-03-30

    申请号：US17740494

    申请日：2022-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Ho JANG ,  Min Hwan SEO ,  Jang Hwi LEE ,  Young Chul KWON ,  Sang Woo BAE ,  Akinori OKUBO ,  Jung Chul LEE ,  Won Don JOO

    IPC: B23K26/53 ,  B23K26/38 ,  B23K26/03

    Abstract: A method for dicing a substrate includes setting a target height for forming a first reforming region inside a target substrate, the target height being a distance from an upper surface of the target substrate to the first reforming region; irradiating a laser beam to a first sample substrate including a first film and a second film being in contact with the first film, and setting a target condition on the basis of a sample condition that results in forming a condensing point of the laser beam on an upper surface of the first film being in contact with the second film; and irradiating the target substrate with the laser beam according to the target condition to form the first reforming region inside the target substrate, wherein a thickness of the second film is the target height.

    INTERNAL PRESSURE CONTROL APPARATUS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
    6.
    发明公开
    INTERNAL PRESSURE CONTROL APPARATUS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240304427A1

    公开(公告)日：2024-09-12

    申请号：US18538419

    申请日：2023-12-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Ki NAM ,  Tae-Hyun KIM ,  Sung Ho JANG ,  Seul Gi LEE

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32642 ,  H01L21/67069 ,  H01J2237/3341

    Abstract: The present disclosure relates to an internal pressure control apparatus capable of uniformly processing an upper surface of a semiconductor substrate and a substrate processing apparatus including the same. The substrate processing apparatus comprising a chamber housing including an exhaust hole for exhausting a process gas flowing thereinto, a substrate support unit inside the chamber housing, supporting a semiconductor substrate, a process gas supply unit providing the process gas to the inside of the chamber housing, a plasma generating unit generating plasma inside the chamber housing by using the process gas, and a ring body installed around the substrate support unit and provided as one body, and further comprising an internal pressure control apparatus controlling an internal pressure of the chamber housing, wherein the internal pressure control apparatus controls a posture of the ring body to control an exhaust amount of the process gas flowing into the chamber housing.

    APPARATUS FOR INSPECTING SUBSTRATE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
    7.
    发明申请
    APPARATUS FOR INSPECTING SUBSTRATE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权

    公开(公告)号：US20230028347A1

    公开(公告)日：2023-01-26

    申请号：US17684052

    申请日：2022-03-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jang Ryul PARK ,  Soon Yang KWON ,  Kwang Rak KIM ,  Myung Jun LEE ,  Sung Ho JANG

    IPC: G01N21/95 ,  G02B7/00

    Abstract: A method for fabricating a semiconductor device is provided. The method includes: loading a substrate on a stage of an apparatus for inspecting the substrate; extracting a first light having a first wavelength from a light by using a light source; acquiring first position information on at least one focal point, formed on the substrate, based on the first wavelength by using a controller, the at least one focal point being a pre-calculated at least one focal point; adjusting a position of at least one from among an objective lens and at least one microsphere in a vertical direction by using the first position information in the controller; condensing the first light, which has passed through the at least one microsphere, on the at least one focal point formed on the substrate; and inspecting the substrate by using the first light condensed on the at least one focal point.

    PLASMA DIAGNOSTIC APPARATUS AND METHOD
    8.
    发明申请
    PLASMA DIAGNOSTIC APPARATUS AND METHOD 审中-公开
    等离子体诊断设备和方法

    公开(公告)号：US20130141720A1

    公开(公告)日：2013-06-06

    申请号：US13690177

    申请日：2012-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho Yong PARK ,  Valdimir VOLYNETS ,  Vladimir PROTOPOPOV ,  Sang Heon LEE ,  Sung Ho JANG ,  Sang Jean JEON

    IPC: G01J3/443

    CPC classification number: G01J3/443 ,  G01N21/68

    Abstract: A plasma diagnostic apparatus includes a vacuum chamber unit having at least one electrode and having plasma generated inside. A bias power unit is disposed inside the vacuum chamber unit to apply a radio frequency voltage to an electrode that supports a wafer. A spectrum unit decomposes light emitted from inside the plasma according to wavelengths. A light detection unit detects the light decomposed according to wavelengths. A control unit controls a turn-on and turn-off process of the light detection unit according to a waveform of the radio frequency voltage.

    Abstract translation: 等离子体诊断装置包括具有至少一个电极并且内部产生等离子体的真空室单元。 偏置功率单元设置在真空室单元内，以对支撑晶片的电极施加射频电压。 光谱单元根据波长分解从等离子体内部发射的光。 光检测单元检测根据波长分解的光。 控制单元根据射频电压的波形来控制光检测单元的接通和关断处理。

    APPARATUS FOR MONITORING PROCESS CHAMBER
    10.
    发明申请
    APPARATUS FOR MONITORING PROCESS CHAMBER 审中-公开

    公开(公告)号：US20190164731A1

    公开(公告)日：2019-05-30

    申请号：US16262024

    申请日：2019-01-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

    IPC: H01J37/32 ,  H04N5/225

    Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

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