公开(公告)号：US20190164731A1

公开(公告)日：2019-05-30

申请号：US16262024

申请日：2019-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/225

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20230120474A1

公开(公告)日：2023-04-20

申请号：US17750653

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyun KIM ,  Seung Bo SHIM ,  Doug Yong SUNG ,  Seung Han BAEK ,  Ju Ho LEE

IPC: H01J37/32

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

公开(公告)号：US20190006150A1

公开(公告)日：2019-01-03

申请号：US15864529

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo SHIM ,  Myung Sun CHOI ,  Nam Jun KANG ,  Doug Yong SUNG ,  Sang Min JEONG ,  Peter Byung H HAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

公开(公告)号：US20170213710A1

公开(公告)日：2017-07-27

申请号：US15260910

申请日：2016-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/335 ,  G06T7/00

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/32972 ,  H04N5/2252

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.