公开(公告)号：US20190206460A1

公开(公告)日：2019-07-04

申请号：US16032768

申请日：2018-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong IL O ,  Jun Hyung KIM ,  Kyo Min SOHN

IPC: G11C8/18 ,  G11C8/12 ,  G11C7/06 ,  G11C7/10 ,  G11C11/4093 ,  G11C29/18

Abstract: A memory device can include a plurality of memory banks coupled to an input/output bus and a memory controller coupled to the plurality of memory banks. The memory controller can be configured to control operations of the plurality of memory banks, where each of the plurality of memory banks can include a bank array including a plurality of memory cells configured to store data, a latch circuit coupled to the input/output bus, where the latch circuit can be configured to store target data received via the input/output bus to provide stored target data, and a comparison circuit coupled to the latch circuit, where the comparison circuit can be configured to compare stored data output by the bank array with the stored target data to provide result data to the memory controller.