SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING SEMICONDUCTOR MEMORY DEVICE

    公开(公告)号:US20230111467A1

    公开(公告)日:2023-04-13

    申请号:US17731994

    申请日:2022-04-28

    IPC分类号: G11C29/20 G11C29/44 G11C29/00

    摘要: A semiconductor memory device includes a memory cell array including memory cell row, each of which includes volatile memory cells, a row hammer management circuit, a repair control circuit and a connection logic. The row hammer management circuit counts access addresses associated with the memory cell rows to store counting values, and determines a hammer address associated with least one of the memory cell rows, which is intensively accessed, based on the counting values. The repair control circuit includes repair controllers, each of which includes a defective address storage, and repairs a defective memory cell row among the memory cell rows. The connection logic connects first repair controllers, which are unused for storing defective addresses, among the plurality of repair controllers, to the row hammer management circuit. The row hammer management circuit uses the first repair controllers as a storage resource to store a portion of the access addresses.

    ELECTRONIC DEVICE INCLUDING SECURE INTEGRATED CIRCUIT

    公开(公告)号:US20200293667A1

    公开(公告)日:2020-09-17

    申请号:US16815541

    申请日:2020-03-11

    摘要: An electronic device including a secure Integrated Circuit (IC) is provided. The electronic device includes a secure IC configured as a System-on-Chip (SoC) and configured to provide a general environment and a security environment, wherein the secure IC includes a main processor configured to operate in the general environment, a secure processor configured to operate in the security environment and control security of data using a first security key, and a secure memory configured to be operatively connected to the secure processor and store a second security key corresponding to the first security key. Various other embodiments are possible.