公开(公告)号：US10515678B2

公开(公告)日：2019-12-24

申请号：US16285295

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boyoung Seo ,  Seongui Seo ,  Gwanhyeob Koh ,  Yongkyu Lee

IPC: G11C11/16 ,  H01L27/22

Abstract: A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.

公开(公告)号：US10891998B2

公开(公告)日：2021-01-12

申请号：US16401236

申请日：2019-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chankyung Kim ,  Taehyun Kim ,  Seongui Seo ,  Sangjung Jeon

IPC: G11C13/00 ,  G11C11/16

Abstract: A memory device including: a memory cell array including a memory cell, the memory cell configured to store first data based on a first write current; a write driver configured to output the first write current based on a control value; and a current controller including a replica memory cell, the current controller configured to generate the control value based on a state of second data which is stored in the replica memory cell, wherein an intensity of the first write current is adjusted based on the control value.